Production of monocrystalline silicon plate price, buy

Production of monocrystalline silicon by Czochralski method.

 

 

Production of monocrystalline silicon is made from polycrystalline silicon by Czochralski method in special installations.

 

Description

Main technical data of the installation “Redmet-90M”

 


Description:

Production of monocrystalline silicon is made from polycrystalline silicon by Czochralski method in special installations.

The method Czochralski – stable growth of single crystals by pulling from a melt with the seed crystal of the same purity as the crystal. The crucible is loaded charge (e.g., silicon) and begins the process of melting to a predetermined temperature above the melting temperature (for silicon – 1415 degrees). After the melt is injected seed, is maintained for some time and begins to rise, revolving at a certain speed (for example, 2 mm/min) and pulling the crystal at a certain speed. The crucible rotates in the opposite direction, optimizing the mass transfer in the melt. Starts pulling a single crystal in a cooler area. After crystallization at the end of the seed started growing cylinder of crystal length of several inches, and after the formation of the diameter of the single crystal due to the gradual lowering of temperatures in the melt. To complete the process the temperature is again raised above the temperature at which growth occurred for the formation of cylindrical structures of a few centimeters. After the temperature slowly lowered and removed from the crystal growth setup.

Over the past five decades and are widely implemented 10 generations of industrial installations for growing single crystals of silicon by Czochralski method a series of “Redmet”.

The installation “Redmet-90M” is the development of a series of installations “Redmet” and is based on constructive solutions that have passed years of testing in production. It is distinguished by reliability, ease of maintenance, ease of manufacture and operation.

The installation “Redmet-90M” is intended to bestelerini growing silicon single crystals by the Czochralski method.

The installation “Redmet-90M” includes a furnace unit, a power supply system for display, monitoring and control.

 


Main technical data of the installation “Redmet-90M”:

Features: Value:
The degree of loading of the crucible, kg to 210
The maximum diameter of the single crystal, mm 300
The axial displacement of the seed, mm to 3000
The diameter of the crucible, mm 508, 610
Installed power, kW 250
The speed of movement of the seed
working, mm/min (0,25 7,6…)
marching, mm/min (14 720…)
The frequency of rotation of the priming, rpm (1…36)
The speed of movement of the crucible
working, mm/min (0,77 0,03…)
marching, mm/min 46
The frequency of rotation of the crucible, Rev/min (1…28)
The stroke length of the crucible, mm 450
Ultimate vacuum, Torr 5·10-2
The pressure of the inert gas
at the entrance, ATM 2,0
in the chamber,Torr (5…20)
The inert gas consumption, l/h (1000…4000)
Water pressure
at the entrance, ATM (2…4)
the output free drain
Consumption of water, m3 /h to 10
Power supply installation three-phase, 380/220V, 50Hz
Control system computerized
Dimensions of kiln
width, mm 1900
depth, mm 2350
height, mm 7400
height when raised the camera, mm 8200
Weight furnace, kg 4500

 

Note: the description of technology on the example of setting a series of “Redmet”.