Installation for growing monocrystals
Installation for growing single crystals.
Description:
Installation for growing of single crystals presents a series of installations.
Installation for growing single crystals suitable for growing single crystals such as cadmium telluride, indium arsenide, and Galia, the indium antimonide, germanium, silicon, sapphire, alyumoittrievy pomegranate, tantalum lithium, lithium niobate, gadolinium molybdate, langasit, Vanadate rare earth metals, silicate and germanate bismuth, and many others.
Equipment for growing single crystals of compounds based on cadmium telluride by the method of moving the heater:
Crystals of the compounds based on cadmium telluride are grown in a specially made sealed ampoule containing the source material. The ampoule is installed on the rod of the movement mechanism, which moves the vial vertically up/down on the work and accelerated the velocity along the axis of the heat unit. In the growth process, the ampoule is no longer visible. All information about the process comes from the sensors. One process about 300 hours.
The method of moving the heater lies in the fact that in the growth ampoule load the seed crystal, it is placed the ingot, the melting of which is formed by the liquid zone of the solution-melt on the basis of tellurium in the upper part is placed the billet of polycrystalline cadmium telluride. When moving down the ampoule is dissolved polycrystalline workpiece, the diffusion of dissolved compounds through the liquid zone of the solution-melt and crystallization of the compound on the seed crystal.
Technical characteristics of the installation for growing single crystals of compounds based on cadmium telluride:
A heating unit placed inside the sealed chamber | |
Thermal unit includes 3 thermal zones and provides the possibility of growing crystals with a diameter up to 80 mm | |
Temperature is the average of the (main) heat zone in the interval °C | 700 950… |
The temperature of the lower and upper retaining heat zones in the interval °C | 200…400 |
The number of controlled heating zones (all / fallback) | 4 / 1 |
The temperature profile of the heater provides a temperature gradient in the range 30…50 deg/cm in the area of the crystal seed | |
The instability of the temperature axis of the temperature profile, °C | 0.5 |
The control panel is executed with use of programmable microcontrollers to control 4 zones heater and the ability to connect to a personal or industrial computer | |
The movement of the rod vertically: | |
– working speed, mm day-1 | 5…25 |
– March speed, mm min-1 | 115 0,115… |
– stroke, mm | 350 |
The frequency of rotation of the rod about the min-1 | 1…60 |
Instability of rotation of the shafts El. LW. not more than, % | 0,5 |
Allowable runout of the vial during rotation – no more than 5 mm in the radial direction | |
The possibility of pumping the working volume (the backing pump) and inert gas (argon) | |
The installed capacity of thermal zones, W | 1000 |
Total power, kW | 4 |
The maximum current of the heating zone, And | 100 |
Displayed parameter: | |
– the temperature sensor zones | |
– the speed of movement of the stock | |
– stem position | |
– frequency of rotation of the stem | |
Overall dimensions, mm (no more) | |
– The kiln: | |
– height | 2565 |
– width | 1000 |
– depth | 850 |
Weight, kg (no more) | |
– Kiln | 1000 |
– Front control | 300 |
Mains voltage In | 380/220 |
Power supply frequency, Hz | 50 |
Cooling water consumption, m3 / hour | 2,0 |
Equipment for growing single crystals of indium arsenide and gallium:
The unit is designed for growing single crystals of indium arsenide InAs and gallium in GaAs under pressure of inert gas with subsequent annealing of the grown crystal.
Technical characteristics of the installation for growing single crystals of indium arsenide and gallium:
The maximum dimensions of the crucible, mm | |
– diameter | 230 |
– height | 200 |
A method of heating the resistive | |
The material of the heater | graphite |
The height of the heater, mm | 400 |
The maximum temperature on the heater | 1400 |
Precision temperature control, With | 0,1 |
Environment in the furnace chamber | |
– ultimate vacuum, mm RT.St. | 1*10-4 |
– excess pressure of inert gas, ATM. | 10-20 |
The device of movement of the upper shaft: | |
– The rotational speed of the upper shaft, rpm | 0-30 |
– The speed of movement of the upper actuator rod, the working mm/min | 0-0,5 |
– The speed of the rapid feed drive upper rod, mm/min | 100 |
– Stroke the seed, mm | 600 |
The device of movement of the crucible: | |
– The amount of movement of the crucible, mm | 200 |
– The rotational speed of the crucible, Rev/min | 0-20 |
– The speed of movement of the actuator lower stem, working, mm/min | 0-0,5 |
– The speed of the accelerated movement of the lower actuator rod, mm/min | 70 |
Thermal unit installation: | |
Upper zone: | |
– The temperature of the heater of the upper zone, With | 1200 |
– Power consumption of the heater of the upper zone, kW | 20 |
– The accuracy of temperature | ±0,1 |
The Middle Zone: | |
– The temperature on the heater, With | 1400 |
– Power consumption, not more, kW | 60 |
– The accuracy of temperature | ±0,1 |
Lower zone: | |
– The temperature on the heater, With | 1200 |
– Power consumption, not more, kW | 20 |
– The accuracy of temperature | ±0,1 |
Equipment for growing single crystals of indium antimonide:
The unit is designed for melting, synthesize and grow single crystals of InSb indium antimonides with subsequent annealing of the grown crystal.
Technical characteristics of the installation for growing single crystals of indium antimonide:
The maximum dimensions of the crucible, mm: – diameter | 135 |
– height | 70 |
A method of heating | resistive |
The material of the heater | graphite |
The height of the heater, mm | 180 |
The maximum temperature on the heater | 1200 |
Precision temperature control, With | 0,1 |
Environment in the furnace chamber:- maximum vacuum, mm RT.St. | 1*10-5 |
– duct or hot inert gas, l/h | 1-100 |
The rotational speed of the upper shaft, rpm | 0-50 |
The speed of movement of the actuator upper stem, working, mm/h | 0-50 |
The speed of movement of the upper actuator rod, main, mm/min | 200 |
The drive movement of the crucible: | |
– The magnitude of the displacement drive of the crucible, mm | 200 |
– The rotational speed of the crucible, Rev/min | 0-20 |
Power supply: | |
heater | single-phase |
– frequency, Hz | 50 |
Compact unit for growing single crystals of:
Compact unit is designed for growing single crystals of germanium, silicon, antimonides of gallium and indium in automatic mode (except zatravlenny) from the crucible Ø102х100 mm and for conducting research.
Technical characteristics of the installation for growing single crystals of germanium, silicon, etc.:
The maximum dimensions of the crucible: | |
– diameter, mm | 102 |
– height, mm | 100 |
A method of heating | resistive |
The material of the heater | graphite |
Limiting temperature, °C | 1650 |
The accuracy of temperature regulation,°C | ± 5 |
Environment in the furnace chamber is a vacuum ( in a clean dry chamber), mm.RT.St | 5×10-5 |
The speed of movement of the upper rod, mm/min: | |
– working | 0,1-8 |
– marching | 150 |
The amount of movement of the upper rod, mm | 400 |
The frequency of rotation of the upper shaft, rpm | 1-30 |
Power supply: | |
– heater | single-phase |
– frequency, Hz | 50 |
Cooling water consumption, m3/hour | 1 |
The pressure of water, MPa | 0,3 |
Automated equipment for growing single crystals of sapphire, garnet alyumoittrievy, tantalate lithium, etc. Czochralski method:
Multifunction installation NIKA-3 is designed for growing a wide range of refractory oxide single crystals by the Czochralski method, such as sapphire, alyumoittrievy pomegranate, tantalum lithium, lithium niobate, gadolinium molybdate, langasit, Vanadate rare earth metals, silicate and germanate bismuth, and many others.
Technical characteristics of the installation for growing single crystals of sapphire, garnet alyumoittrievy, tantalate lithium, etc.:
Melting point | to 2100О WITH |
The diameter of the crucible to melt | up to 150 mm (depending on the type grown crystal) |
The mass of the grown crystal | up to 4 kg; 8 kg |
The measurement range of the sensor weight | up to 5 kg; 10 kg |
The sensitivity of the weight sensor | not less than 0,02 g; 0,04 g |
Working stroke of the upper stem | 550 mm |
The speed of movement of upper shaft: | |
working | from 0.1 up to 120.0 mm/h |
Express | from 0.5 to 150.0 mm/min |
The speed of rotation of the upper stem | 1-100 rpm |
Stroke of the lower rod | 200 mm |
Type Converter | transistor (IGBT technology) |
The output power of the Converter | 40 kW; 100 kW |
The usable range of the output power of the frequency Converter | from 1 to 100 % of used |
Efficiency | not lower than 93% |
The allowable deviation of the output power of the frequency Converter from the set | ± 0,05% |
The pressure of the inert gas in the chamber | not more than 1 5х105Па |
Ultimate backing pump in a growth chamber turned off when the inductor | no more than 2.6 PA |
Power consumption of the equipment (without frequency Converter) | not more than 3 kW |
Pressure of cooling water | from 200 kPa to 250 kPa |