Installation for growing monocrystals

Installation for growing single crystals.

 

 


Description:

Installation for growing of single crystals presents a series of installations.

Installation for growing single crystals suitable for growing single crystals such as cadmium telluride, indium arsenide, and Galia, the indium antimonide, germanium, silicon, sapphire, alyumoittrievy pomegranate, tantalum lithium, lithium niobate, gadolinium molybdate, langasit, Vanadate rare earth metals, silicate and germanate bismuth, and many others.

 


Equipment for growing single crystals of compounds based on cadmium telluride by the method of moving the heater:

Crystals of the compounds based on cadmium telluride are grown in a specially made sealed ampoule containing the source material. The ampoule is installed on the rod of the movement mechanism, which moves the vial vertically up/down on the work and accelerated the velocity along the axis of the heat unit. In the growth process, the ampoule is no longer visible. All information about the process comes from the sensors. One process about 300 hours.

The method of moving the heater lies in the fact that in the growth ampoule load the seed crystal, it is placed the ingot, the melting of which is formed by the liquid zone of the solution-melt on the basis of tellurium in the upper part is placed the billet of polycrystalline cadmium telluride. When moving down the ampoule is dissolved polycrystalline workpiece, the diffusion of dissolved compounds through the liquid zone of the solution-melt and crystallization of the compound on the seed crystal.

 

Technical characteristics of the installation for growing single crystals of compounds based on cadmium telluride:

A heating unit placed inside the sealed chamber
Thermal unit includes 3 thermal zones and provides the possibility of growing crystals with a diameter up to 80 mm
Temperature is the average of the (main) heat zone in the interval °C 700 950…
The temperature of the lower and upper retaining heat zones in the interval °C 200…400
The number of controlled heating zones (all / fallback) 4 / 1
The temperature profile of the heater provides a temperature gradient in the range 30…50 deg/cm in the area of the crystal seed
The instability of the temperature axis of the temperature profile, °C 0.5
The control panel is executed with use of programmable microcontrollers to control 4 zones heater and the ability to connect to a personal or industrial computer
The movement of the rod vertically:
  working speed, mm day-1 5…25
  March speed, mm min-1 115 0,115…
  stroke, mm 350
The frequency of rotation of the rod about the min-1 1…60
Instability of rotation of the shafts El. LW. not more than, % 0,5
Allowable runout of the vial during rotation – no more than 5 mm in the radial direction
The possibility of pumping the working volume (the backing pump) and inert gas (argon)
The installed capacity of thermal zones, W 1000
Total power, kW 4
The maximum current of the heating zone, And 100
Displayed parameter:
the temperature sensor zones
the speed of movement of the stock
  stem position
  frequency of rotation of the stem
Overall dimensions, mm (no more)
  The kiln:
    height 2565
width 1000
depth 850
Weight, kg (no more)
  Kiln 1000
  Front control 300
Mains voltage In 380/220
Power supply frequency, Hz 50
Cooling water consumption, m3 / hour 2,0

 

Equipment for growing single crystals of indium arsenide and gallium:

The unit is designed for growing single crystals of indium arsenide InAs and gallium in GaAs under pressure of inert gas with subsequent annealing of the grown crystal.

 

Technical characteristics of the installation for growing single crystals of indium arsenide and gallium:

The maximum dimensions of the crucible, mm
diameter 230
height 200
A method of heating the resistive
The material of the heater graphite
The height of the heater, mm 400
The maximum temperature on the heater 1400
Precision temperature control, With 0,1
Environment in the furnace chamber
ultimate vacuum, mm RT.St. 1*10-4
excess pressure of inert gas, ATM. 10-20
The device of movement of the upper shaft:
The rotational speed of the upper shaft, rpm 0-30
The speed of movement of the upper actuator rod, the working mm/min 0-0,5
The speed of the rapid feed drive upper rod, mm/min 100
Stroke the seed, mm 600
The device of movement of the crucible:
The amount of movement of the crucible, mm 200
The rotational speed of the crucible, Rev/min 0-20
The speed of movement of the actuator lower stem, working, mm/min 0-0,5
The speed of the accelerated movement of the lower actuator rod, mm/min 70
Thermal unit installation:
Upper zone:
The temperature of the heater of the upper zone, With 1200
  Power consumption of the heater of the upper zone, kW 20
  The accuracy of temperature ±0,1
The Middle Zone:
  The temperature on the heater, With 1400
  Power consumption, not more, kW 60
  The accuracy of temperature ±0,1
Lower zone:
  The temperature on the heater, With 1200
Power consumption, not more, kW 20
  The accuracy of temperature ±0,1

 

Equipment for growing single crystals of indium antimonide:

The unit is designed for melting, synthesize and grow single crystals of InSb indium antimonides with subsequent annealing of the grown crystal.

 

Technical characteristics of the installation for growing single crystals of indium antimonide:

The maximum dimensions of the crucible, mm: – diameter 135
height 70
A method of heating resistive
The material of the heater graphite
The height of the heater, mm 180
The maximum temperature on the heater 1200
Precision temperature control, With 0,1
Environment in the furnace chamber:- maximum vacuum, mm RT.St. 1*10-5
duct or hot inert gas, l/h 1-100
The rotational speed of the upper shaft, rpm 0-50
The speed of movement of the actuator upper stem, working, mm/h 0-50
The speed of movement of the upper actuator rod, main, mm/min 200
The drive movement of the crucible:
The magnitude of the displacement drive of the crucible, mm 200
The rotational speed of the crucible, Rev/min 0-20
Power supply:
heater single-phase
frequency, Hz 50

 

Compact unit for growing single crystals of:

Compact unit is designed for growing single crystals of germanium, silicon, antimonides of gallium and indium in automatic mode (except zatravlenny) from the crucible Ø102х100 mm and for conducting research.

 

Technical characteristics of the installation for growing single crystals of germanium, silicon, etc.:

The maximum dimensions of the crucible:
  diameter, mm 102
  height, mm 100
A method of heating resistive
The material of the heater graphite
Limiting temperature, °C 1650
The accuracy of temperature regulation,°C ± 5
Environment in the furnace chamber is a vacuum ( in a clean dry chamber), mm.RT.St 5×10-5
The speed of movement of the upper rod, mm/min:
  working 0,1-8
  marching 150
The amount of movement of the upper rod, mm 400
The frequency of rotation of the upper shaft, rpm 1-30
Power supply:
  heater single-phase
  frequency, Hz 50
Cooling water consumption, m3/hour 1
The pressure of water, MPa 0,3

 

Automated equipment for growing single crystals of sapphire, garnet alyumoittrievy, tantalate lithium, etc. Czochralski method:

Multifunction installation NIKA-3 is designed for growing a wide range of refractory oxide single crystals by the Czochralski method, such as sapphire, alyumoittrievy pomegranate, tantalum lithium, lithium niobate, gadolinium molybdate, langasit, Vanadate rare earth metals, silicate and germanate bismuth, and many others.

 

Technical characteristics of the installation for growing single crystals of sapphire, garnet alyumoittrievy, tantalate lithium, etc.:

Melting point to 2100О WITH
The diameter of the crucible to melt up to 150 mm (depending on the type grown crystal)
The mass of the grown crystal up to 4 kg; 8 kg
The measurement range of the sensor weight up to 5 kg; 10 kg
The sensitivity of the weight sensor not less than 0,02 g; 0,04 g
Working stroke of the upper stem 550 mm
The speed of movement of upper shaft:
working from 0.1 up to 120.0 mm/h
Express from 0.5 to 150.0 mm/min
The speed of rotation of the upper stem 1-100 rpm
Stroke of the lower rod 200 mm
Type Converter transistor (IGBT technology)
The output power of the Converter 40 kW; 100 kW
The usable range of the output power of the frequency Converter from 1 to 100 % of used
Efficiency not lower than 93%
The allowable deviation of the output power of the frequency Converter from the set ± 0,05%
The pressure of the inert gas in the chamber not more than 1 5х105Па
Ultimate backing pump in a growth chamber turned off when the inductor no more than 2.6 PA
Power consumption of the equipment (without frequency Converter) not more than 3 kW
Pressure of cooling water from 200 kPa to 250 kPa