IGBT transistor – a bipolar transistor with insulated gate the working principle of how to check the driver inverter price, buy control diagram of the power module for powerful welding inverter power supply reference enable field characteristics parameters diode amplifier application catalog designation

IGBT transistor, controlled low power level.

 

 

IGBT transistor – a bipolar transistor with insulated gate, combining two transistors in one semiconductor structure of a bipolar (forming the power line) and field (forming a control channel).

 

Description

The principle of operation

Advantages

Application

 


Description:

IGBT transistor – a bipolar transistor with insulated gate, combining two transistors in one semiconductor structure of a bipolar (forming the power line) and field (forming a control channel), and has output characteristics of a bipolar transistor (large permissible operating voltage) and the input characteristics of the MOSFET (the minimum cost of control).

The IGBT transistor has three pins: G – “bolt”, C – “collector”, E – “emitter”:

 

 

Power modules IGBT and MOSFET can be used interchangeably, but for high-frequency low-voltage cascades are usually used MOSFET transistors and high-voltage – IGBT.

 


Working principle:

Power IGBT transistor is controlled by a voltage applied to driven electrode-“gate”, which is isolated from the power circuit. After a positive voltage between the gate and the drain is the opening of a field-effect transistor (formed by n-channel between source and drain). The movement of charges from the n region into the p region leads to the discovery of the bipolar transistor and cause current flow from the emitter to the collector. Thus, the field effect transistor controls the operation of the bipolar.

 

Advantages:

– high current density;

small static and dynamic losses;

– resistance to short circuit;

high input impedance, low control power;

– low value of residual voltage in the on state;

small losses in the open state at high currents and high voltages;

– switching characteristics and conductivity of the bipolar transistor;

voltage control. The absence of control current in static modes and the overall low consumption in circuits, power allows you to abandon the galvanically isolated control circuits on discrete elements and to create the integrated circuit drivers;

– the use of IGBT modules in the systems management of traction engines allows (in comparison with thyristor devices) to provide high efficiency, high smoothness of the machine and possibility of application of regenerative braking almost at any speed.

 

Application:

when working with high voltages (>1,000 V), high temperature (over 100 °C) and high output power (over 5 kW);

control circuits for the motors (at the operating frequency less than 20 kHz), the sources of uninterruptible power supply (constant load and low frequency) and welding machines (which require high current and low frequency up to 50 kHz);

inverters, pulse regulators of the current, variable frequency drives.